Normy DIN - Německé národní normy - strana 16536

Semiconductor devices - Part 7: Bipolar transistors; Section one: Blank detail specification for low power amplification transistors; Identical with IEC 60747-7-1:1989.

NEPLATNÁ vydána dne 1.5.1992

Semiconductor devices - Part 7: Bipolar transistors; Section two: Blank detail specification for case-rated transistors for low-frequency amplification; Identical with IEC 60747-7-2:1989.

NEPLATNÁ vydána dne 1.5.1992

Semiconductor devices - Discrete devices - Part 7-5: Bipolar transistors (BTRs) for power switching applications.

NEPLATNÁ vydána dne 1.5.2003

Semiconductor discrete devices and integrated circuits - Part 7: Bipolar transistors.

NEPLATNÁ vydána dne 1.12.1997

Semiconductor devices - Discrete devices - Part 7: Bipolar transistors (BTRs).

NEPLATNÁ vydána dne 1.9.2007

Semiconductor devices - Field-effect transistors; Section one: Blank detail specification for single-gate field-effect tramsistors up to 5 W and 1 GHz; Identical with IEC 60747-8-1:1987.

NEPLATNÁ vydána dne 1.7.1991

Semiconductor devices - Discrete devices - Part 8-12: Metal-oxide-semiconductor field-effect transistors (MOSFETs) for power switching applications.

NEPLATNÁ vydána dne 1.12.2001

Semiconductor devices - Discrete devices - Field-effect transistors; Identical with IEC 60747-8:1984.

NEPLATNÁ vydána dne 1.8.1989

Semiconductor devices - Discrete devices - Part 8: Field-effect transistors.

NEPLATNÁ vydána dne 1.6.2007

Semiconductor devices - Discrete devices - Part 9: Insulated gate bipolar transistors (IGBTs).

NEPLATNÁ vydána dne 1.9.2004