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ASTM F26-87a(1999)
Standard Test Methods for Determining the Orientation of a Semiconductive Single Crystal (Withdrawn 2003) (Includes all amendments And changes 3/2/2021).
Automaticky přeložený název:
Standardní zkušební metody pro stanovení orientace polovodivého monokrystalu (Withdrawn 2003 )
NORMA vydána dne 1.1.1999
Informace o normě:
Označení normy: ASTM F26-87a(1999)
Poznámka: NEPLATNÁ
Datum vydání normy: 1.1.1999
Kód zboží: NS-54209
Počet stran: 5
Přibližná hmotnost: 15 g (0.03 liber)
Země: Americká technická norma
Kategorie: Technické normy ASTM
Anotace textu normy ASTM F26-87a(1999) :
Keywords:
germanium, orientation, preferential etch, semiconductor, silicon, X-ray diffraction, ICS Number Code 29.045 (Semiconducting materials)
Doplňující informace
| 1. Scope |
|
This standard was transferred to SEMI (www.semi.org) May 2003 1.1 These test methods cover techniques for determining the crystallographic orientation of a surface which is roughly parallel to a low-index atomic plane in single crystals used primarily for semiconductor devices. 1.2 Two types of test methods are covered as follows: 1.2.1 Test Method A, X-ray Diffraction Orientation- This test method may be used for the orientation of all semiconductive single crystals. 1.2.2 Test Method B, Optical Orientation- This test method is limited in application at the present time to elemental semiconductors. 1.3 This standard does not purport to address all of the safety problems, if any, associated with its use. It is the responsibility of the user of this standard to establish appropriate safety and health practices and determine the applicability of regulatory limitations prior to use. Specific hazard statements are given in Section 6. |
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