Semiconductor devices - Classification of defects in gallium nitride epitaxial film on silicon carbide substrate

The information about the standard:

Designation standards: IEC 63229-ed.1.0
Publication date standards: 7.4.2021
The number of pages: 21
Approximate weight : 63 g (0.14 lbs)
Country: International technical standard
Kategorie: Technické normy IEC

Annotation of standard text IEC 63229-ed.1.0 :

IEC 63229:2021(E) gives guidelines for the definition and classification of defects in GaN epitaxial film grown on SiC substrate. They are identified and described on the basis of examples, mainly by schematic illustrations, optical microscope images, and transmission electron microscope images for these defects. This document covers only defects in as-grown GaN epitaxial film on SiC substrate and does not include defects caused by subsequent processes.