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IEC 63068-2-ed.1.0

Semiconductor devices - Non-destructive recognition criteria of defects in silicon carbide homoepitaxial wafer for power devices - Part 2: Test method for defects using optical inspection

NORMA vydána dne 30.1.2019

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Informace o normě:

Označení normy: IEC 63068-2-ed.1.0
Datum vydání normy: 30.1.2019
Počet stran: 25
Přibližná hmotnost: 75 g (0.17 liber)
Země: Mezinárodní technická norma
Kategorie: Technické normy IEC

Anotace textu normy IEC 63068-2-ed.1.0 :

IEC 63068-2:2019(E) provides definitions and guidance in use of optical inspection for detecting as-grown defects in commercially available 4H-SiC (Silicon Carbide) epitaxial wafers. Additionally, this document exemplifies optical images to enable the detection and categorization of the defects for SiC homoepitaxial wafers. This document deals with a non-destructive test method for the defects so that destructive methods such as preferential etching are out of scope in this document.