Semiconductor devices - Micro-electromechanical devices - Part 25: Silicon based MEMS fabrication technology - Measurement method of pull-press and shearing strength of micro bonding area
NORMA vydána dne 29.8.2016
Označení normy: IEC 62047-25-ed.1.0
Datum vydání normy: 29.8.2016
Počet stran: 45
Přibližná hmotnost: 135 g (0.30 liber)
Země: Mezinárodní technická norma
Kategorie: Technické normy IEC
IEC 62047-25:2016 specifies the in-situ testing method to measure the bonding strength of micro bonding area which is fabricated by micromachining technologies used in silicon-based micro-electromechanical system (MEMS). This document is applicable to the in-situ pull-press and shearing strength measurement of the micro bonding area fabricated by microelectronic technology process and other micromachining technology. LIEC 62047-25:2016 specifie la methode dessai in situ pour mesurer la resistance de brasure dune microzone de brasure fabriquee par des technologies de micro-usinage utilisees dans un systeme microelectromecanique (MEMS) a base de silicium. Le present document sapplique a la mesure in situ de la resistance a la traction-compression et de la resistance au cisaillement dune microzone de brasure fabriquee par un processus microelectronique et dautres technologies de micro-usinage.