IEC 60747-9-ed.3.0

Anotace textu normy IEC 60747-9-ed.3.0 :

IEC 60747-9:2019 specifies product specific standards for terminology, letter symbols, essential ratings and characteristics, verification of ratings and methods of measurement for insulated-gate bipolar transistors (IGBTs). This third edition includes the following significant technical changes with respect to the previous edition:

1. reverse-blocking IGBT and its related technical contents have been added;
2. reverse-conducting IGBT and its related technical contents have been added;
3. some parts of the previous edition have been amended, combined or deleted.

L’IEC 60747-9:2019 ED3 specifie la terminologie, les symboles litteraux, les valeurs assignees et caracteristiques essentielles, la verification des valeurs assignees ainsi que les methodes de mesure pour les transistors bipolaires a grille isolee (IGBT, insulated-gate bipolar transistors). Cette edition inclut les modifications techniques majeures suivantes par rapport a l’edition precedente:

1. ajout de transistor bipolaire a grille isolee bloque en inverse et du contenu technique associe;
2. ajout de transistor bipolaire a grille isolee passant en inverse et du contenu technique associe;
3. modification, combinaison ou suppression de certaines parties de l’edition precedente.