Standard Test Method for Separating an Ionizing Radiation-Induced MOSFET Threshold Voltage Shift Into Components Due to Oxide Trapped Holes and Interface States Using the Subthreshold Current-Voltage Characteristics (Withdrawn 2023)
NORMA vydána dne 1.3.2018
Designation standards: ASTM F996-11(2018)
Note: NEPLATNÁ
Publication date standards: 1.3.2018
The number of pages: 7
Approximate weight : 21 g (0.05 lbs)
Country: American technical standard
Kategorie: Technické normy ASTM
Keywords:
c/v characteristics, current-voltage characteristics, interface states, ionizing radiation, MOSFET, oxide-trapped holes, threshold voltage shift, trapped holes,, ICS Number Code 31.080.30 (Transistors)