ASTM F996-11

Standard Test Method for Separating an Ionizing Radiation-Induced MOSFET Threshold Voltage Shift Into Components Due to Oxide Trapped Holes and Interface States Using the Subthreshold Current-Voltage Characteristics

NORMA vydána dne 1.1.2011

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The information about the standard:

Designation standards: ASTM F996-11
Note: NEPLATNÁ
Publication date standards: 1.1.2011
The number of pages: 7
Approximate weight : 21 g (0.05 lbs)
Country: American technical standard
Kategorie: Technické normy ASTM

Annotation of standard text ASTM F996-11 :

Keywords:
c/v characteristics, current-voltage characteristics, interface states, ionizing radiation, MOSFET, oxide-trapped holes, threshold voltage shift, trapped holes, Current measurement--semiconductors, Electrical conductors (semiconductors), Gate and field oxides, Ionizing radiation, MOSFETs, Radiation exposure--electronic components/devices, Silicon semiconductors, Threshold voltage, ICS Number Code 31.080.30 (Transistors)