ASTM F996-98(2003)

Standard Test Method for Separating an Ionizing Radiation-Induced MOSFET Threshold Voltage Shift Into Components Due to Oxide Trapped Holes and Interface States Using the Subthreshold Current-Voltage Characteristics

NORMA vydána dne 10.5.1998

Anglicky -
Online zabezpečené PDF (1741.60 CZK)

Anglicky -

Tištěné (1741.60 CZK)

The information about the standard:

Designation standards: ASTM F996-98(2003)
Note: NEPLATNÁ
Publication date standards: 10.5.1998
The number of pages: 7
Approximate weight : 21 g (0.05 lbs)
Country: American technical standard
Kategorie: Technické normy ASTM

Annotation of standard text ASTM F996-98(2003) :

Keywords:
c/v characteristics, current-voltage characteristics, interface states, ionizing radiation, MOSFET, oxide-trapped holes, threshold voltage shift, trapped holes