Test Method for Determining Carrier Density in Silicon Epitaxial Layers by Capacitance-Voltage Measurements on Fabricated Junction or Schottky Diodes (Withdrawn 2001)
NORMA vydána dne 1.1.1994
Označení normy: ASTM F419-94
Poznámka: NEPLATNÁ
Datum vydání normy: 1.1.1994
Počet stran: 11
Přibližná hmotnost: 33 g (0.07 liber)
Země: Americká technická norma
Kategorie: Technické normy ASTM
Keywords:
Capacitance-voltage method, Carrier density (in semiconductors), Density-electronic applications, Dielectric breakdown/strength-semiconductor materials, Diodes, Epitaxial wafer, Gate bias, Inhomogeneities, Junction diode, Net carrier density (in semiconductors), Polished silicon wafers/slices, Resistance and resistivity, Schottky diode, Silicon semiconductors, Single-crystal silicon, Voltage, carrier density-silicon epitaxial layers, by capacitance-voltage